The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.

The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.

Authors

  • Dari de Oliveira Toginho Filho Universidade Estadual de Londrina
  • Ivan Frederico Lupiano Dias Universidade Estadual de Londrina
  • José Leonil Duarte Universidade Estadual de Londrina
  • Edson Laureto Universidade Estadual de Londrina
  • Jean C Harmand Laboratoire de Photonique et de Nanostructures

DOI:

https://doi.org/10.5433/1679-0375.2008v29n1p39

Keywords:

Semiconductor, Bragg mirror, AlGaAsSb, AlAsSb.

Abstract

The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses.

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Author Biographies

Dari de Oliveira Toginho Filho, Universidade Estadual de Londrina

Departamento de Física, Universidade Estadual de Londrina.

Ivan Frederico Lupiano Dias, Universidade Estadual de Londrina

Departamento de Física, Universidade Estadual de Londrina.

José Leonil Duarte, Universidade Estadual de Londrina

Departamento de Física, Universidade Estadual de Londrina.

Edson Laureto, Universidade Estadual de Londrina

Departamento de Física, Universidade Estadual de Londrina.

Jean C Harmand, Laboratoire de Photonique et de Nanostructures

CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 , Marcoussis, France.

Published

2008-07-15

How to Cite

Toginho Filho, D. de O., Dias, I. F. L., Duarte, J. L., Laureto, E., & Harmand, J. C. (2008). The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP. Semina: Ciências Exatas E Tecnológicas, 29(1), 39–44. https://doi.org/10.5433/1679-0375.2008v29n1p39

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Original Article

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