New semicondutor material structures.
DOI:
https://doi.org/10.5433/1679-0375.1991v12n4p265Keywords:
Epitaxial Growth, Semiconductors, Quantum Wells.Abstract
New techniques of epitaxial growth and existence of new semiconductor materials make it possible to obtain new structures for constructing high-speed devices. We present here one of these structures, the III- V Quantum Well, and discuss some of its physical properties that result in interesting technological applications.
Metrics
Downloads
Published
How to Cite
Issue
Section
License
The Copyright Declaration for articles published in this journal is the author’s right. Since manuscripts are published in an open access Journal, they are free to use, with their own attributions, in educational and non-commercial applications. The Journal has the right to make, in the original document, changes regarding linguistic norms, orthography, and grammar, with the purpose of ensuring the standard norms of the language and the credibility of the Journal. It will, however, respect the writing style of the authors. When necessary, conceptual changes, corrections, or suggestions will be forwarded to the authors. In such cases, the manuscript shall be subjected to a new evaluation after revision. Responsibility for the opinions expressed in the manuscripts lies entirely with the authors.
This journal is licensed with a license Creative Commons Attribution-NonCommercial 4.0 International.
